Cdznse-znse multilayers by metalorganic vapour phase epitaxy using dimethylselenide

The growth of CdZnSe-ZnSe multilayers using (CH3)2Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by secondary ion mass spectrometry, quantum wells of the desired alloy composition have been successfully grown for a well width of 20 nm. The uniform layers which can be obtained using dimethylselenide as the group VI precursor allow stimulated emission to be observed at 77 K from a multiple quantum well structure consisting of three, 30 nm wells under nitrogen laser excitation.