CdZnSe-ZnSe multilayers by MOVPE using dimethylselenide

P. J. Parbrook; A. Kamata; T. Uemoto

doi:10.7567/ssdm.1992.s-i-10

CdZnSe-ZnSe multilayers by MOVPE using dimethylselenide

P. J. Parbrook
, A. Kamata
, T. Uemoto

Toshiba Corporation

Research output: Contribution to conference › Paper › peer-review

Abstract

The growth of CdZnSe-ZnSe multilayers using (CH₃)₂Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by SIMS, quantum wells of the desired alloy composition can still be grown if the well width is greater than about 10 nm. The uniform layers allow stimulated emission to be obtained at 77 K from a multi-quantum well sample under nitrogen laser excitation.

Original language	English
Pages	354-356
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.s-i-10
Publication status	Published - 1992
Externally published	Yes
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 26 Aug 1992 → 28 Aug 1992

Conference

Conference	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	26/08/92 → 28/08/92

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10.7567/ssdm.1992.s-i-10

Cite this

@conference{7d69310fd46040e1a40a404b6810e920,

title = "CdZnSe-ZnSe multilayers by MOVPE using dimethylselenide",

abstract = "The growth of CdZnSe-ZnSe multilayers using (CH3)2Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by SIMS, quantum wells of the desired alloy composition can still be grown if the well width is greater than about 10 nm. The uniform layers allow stimulated emission to be obtained at 77 K from a multi-quantum well sample under nitrogen laser excitation.",

author = "Parbrook, \{P. J.\} and A. Kamata and T. Uemoto",

year = "1992",

doi = "10.7567/ssdm.1992.s-i-10",

language = "English",

pages = "354--356",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

}

TY - CONF

T1 - CdZnSe-ZnSe multilayers by MOVPE using dimethylselenide

AU - Parbrook, P. J.

AU - Kamata, A.

AU - Uemoto, T.

PY - 1992

Y1 - 1992

N2 - The growth of CdZnSe-ZnSe multilayers using (CH3)2Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by SIMS, quantum wells of the desired alloy composition can still be grown if the well width is greater than about 10 nm. The uniform layers allow stimulated emission to be obtained at 77 K from a multi-quantum well sample under nitrogen laser excitation.

AB - The growth of CdZnSe-ZnSe multilayers using (CH3)2Se at 475°C is reported. Despite the occurrence of thermally induced diffusion, observed by SIMS, quantum wells of the desired alloy composition can still be grown if the well width is greater than about 10 nm. The uniform layers allow stimulated emission to be obtained at 77 K from a multi-quantum well sample under nitrogen laser excitation.

UR - https://www.scopus.com/pages/publications/0026962223

U2 - 10.7567/ssdm.1992.s-i-10

DO - 10.7567/ssdm.1992.s-i-10

M3 - Paper

AN - SCOPUS:0026962223

SP - 354

EP - 356

T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

CdZnSe-ZnSe multilayers by MOVPE using dimethylselenide

Abstract

Conference

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