Challenges for introducing Ge and III/V devices into CMOS technologies

M. Heyns; A. Alian; G. Brammertz; M. Caymax; G. Eneman; J. Franco; F. Gencarelli; G. Groeseneken; G. Hellings; A. Hikavyy; M. Houssa; B. Kaczer; D. Lin; R. Loo; C. Merckling; M. Meuris; J. Mitard; L. Nyns; S. Sioncke; W. Vandervorst; B. Vincent; N. Waldron; L. Witters

doi:10.1109/IRPS.2012.6241852

Challenges for introducing Ge and III/V devices into CMOS technologies

M. Heyns
, A. Alian
, G. Brammertz
, M. Caymax
, G. Eneman
, J. Franco
, F. Gencarelli
, G. Groeseneken
, G. Hellings
, A. Hikavyy
, M. Houssa
, B. Kaczer
, D. Lin
, R. Loo
, C. Merckling
, M. Meuris
, J. Mitard
, L. Nyns
, S. Sioncke
, W. Vandervorst

B. Vincent, N. Waldron, L. Witters

Interuniversitair Micro-Elektronica Centrum
KU Leuven

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.

Original language	English
Title of host publication	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5D.1.1-5D.1.10
ISBN (Print)	9781457716799
DOIs	https://doi.org/10.1109/IRPS.2012.6241852
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States Duration: 15 Apr 2012 → 19 Apr 2012

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Conference

Conference	2012 IEEE International Reliability Physics Symposium, IRPS 2012
Country/Territory	United States
City	Anaheim, CA
Period	15/04/12 → 19/04/12

Keywords

CMOS
defects
Germanium
III/V

Access to Document

10.1109/IRPS.2012.6241852

Cite this

Heyns, M., Alian, A., Brammertz, G., Caymax, M., Eneman, G., Franco, J., Gencarelli, F., Groeseneken, G., Hellings, G., Hikavyy, A., Houssa, M., Kaczer, B., Lin, D., Loo, R., Merckling, C., Meuris, M., Mitard, J., Nyns, L., Sioncke, S., ... Witters, L. (2012). Challenges for introducing Ge and III/V devices into CMOS technologies. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (pp. 5D.1.1-5D.1.10). Article 6241852 (IEEE International Reliability Physics Symposium Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS.2012.6241852

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title = "Challenges for introducing Ge and III/V devices into CMOS technologies",

abstract = "High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.",

keywords = "CMOS, defects, Germanium, III/V",

author = "M. Heyns and A. Alian and G. Brammertz and M. Caymax and G. Eneman and J. Franco and F. Gencarelli and G. Groeseneken and G. Hellings and A. Hikavyy and M. Houssa and B. Kaczer and D. Lin and R. Loo and C. Merckling and M. Meuris and J. Mitard and L. Nyns and S. Sioncke and W. Vandervorst and B. Vincent and N. Waldron and L. Witters",

year = "2012",

doi = "10.1109/IRPS.2012.6241852",

language = "English",

isbn = "9781457716799",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "5D.1.1--5D.1.10",

booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",

address = "United States",

note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",

}

Heyns, M, Alian, A, Brammertz, G, Caymax, M, Eneman, G, Franco, J, Gencarelli, F, Groeseneken, G, Hellings, G, Hikavyy, A, Houssa, M, Kaczer, B, Lin, D, Loo, R, Merckling, C, Meuris, M, Mitard, J, Nyns, L, Sioncke, S, Vandervorst, W, Vincent, B, Waldron, N & Witters, L 2012, Challenges for introducing Ge and III/V devices into CMOS technologies. in 2012 IEEE International Reliability Physics Symposium, IRPS 2012., 6241852, IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 5D.1.1-5D.1.10, 2012 IEEE International Reliability Physics Symposium, IRPS 2012, Anaheim, CA, United States, 15/04/12. https://doi.org/10.1109/IRPS.2012.6241852

Challenges for introducing Ge and III/V devices into CMOS technologies. / Heyns, M.; Alian, A.; Brammertz, G. et al.
2012 IEEE International Reliability Physics Symposium, IRPS 2012. Institute of Electrical and Electronics Engineers Inc., 2012. p. 5D.1.1-5D.1.10 6241852 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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T1 - Challenges for introducing Ge and III/V devices into CMOS technologies

AU - Heyns, M.

AU - Alian, A.

AU - Brammertz, G.

AU - Caymax, M.

AU - Eneman, G.

AU - Franco, J.

AU - Gencarelli, F.

AU - Groeseneken, G.

AU - Hellings, G.

AU - Hikavyy, A.

AU - Houssa, M.

AU - Kaczer, B.

AU - Lin, D.

AU - Loo, R.

AU - Merckling, C.

AU - Meuris, M.

AU - Mitard, J.

AU - Nyns, L.

AU - Sioncke, S.

AU - Vandervorst, W.

AU - Vincent, B.

AU - Waldron, N.

AU - Witters, L.

PY - 2012

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AB - High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.

KW - CMOS

KW - defects

KW - Germanium

KW - III/V

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T3 - IEEE International Reliability Physics Symposium Proceedings

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BT - 2012 IEEE International Reliability Physics Symposium, IRPS 2012

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 15 April 2012 through 19 April 2012

ER -

Heyns M, Alian A, Brammertz G, Caymax M, Eneman G, Franco J et al. Challenges for introducing Ge and III/V devices into CMOS technologies. In 2012 IEEE International Reliability Physics Symposium, IRPS 2012. Institute of Electrical and Electronics Engineers Inc. 2012. p. 5D.1.1-5D.1.10. 6241852. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS.2012.6241852

Challenges for introducing Ge and III/V devices into CMOS technologies

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Keywords

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