@inbook{2a8484e4732140cca63d21a9deebdb06,
title = "Challenges for introducing Ge and III/V devices into CMOS technologies",
abstract = "High mobility channel materials and new device structures will be needed to meet the power and performance specifications in future technology nodes. In these new material systems and devices various electrically active defects are present at or close to the interface between the high-k dielectric and the alternative channel material which are a major concern for both the performance and the reliability of these new devices.",
keywords = "CMOS, defects, Germanium, III/V",
author = "M. Heyns and A. Alian and G. Brammertz and M. Caymax and G. Eneman and J. Franco and F. Gencarelli and G. Groeseneken and G. Hellings and A. Hikavyy and M. Houssa and B. Kaczer and D. Lin and R. Loo and C. Merckling and M. Meuris and J. Mitard and L. Nyns and S. Sioncke and W. Vandervorst and B. Vincent and N. Waldron and L. Witters",
year = "2012",
doi = "10.1109/IRPS.2012.6241852",
language = "English",
isbn = "9781457716799",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "5D.1.1--5D.1.10",
booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",
address = "United States",
note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",
}