Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks

P. K. Hurley; K. Cherkaoui; S. McDonnell; G. Hughes; A. W. Groenland

doi:10.1016/j.microrel.2006.09.030

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO₂/HfO₂/TiN gate stacks

P. K. Hurley
, K. Cherkaoui
, S. McDonnell
, G. Hughes
, A. W. Groenland

Research output: Contribution to journal › Article › peer-review

Abstract

The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO₂/HfO₂ system are presented. Experimental results are analysed for HfO₂ thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 °C.

Original language	English
Pages (from-to)	1195-1201
Number of pages	7
Journal	Microelectronics Reliability
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2006.09.030
Publication status	Published - Aug 2007

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SDG 7 Affordable and Clean Energy

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10.1016/j.microrel.2006.09.030

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title = "Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks",

abstract = "The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 °C.",

author = "Hurley, \{P. K.\} and K. Cherkaoui and S. McDonnell and G. Hughes and Groenland, \{A. W.\}",

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AU - Hurley, P. K.

AU - Cherkaoui, K.

AU - McDonnell, S.

AU - Hughes, G.

AU - Groenland, A. W.

PY - 2007/8

Y1 - 2007/8

N2 - The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 °C.

AB - The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350-550 °C.

UR - https://www.scopus.com/pages/publications/34547170628

U2 - 10.1016/j.microrel.2006.09.030

DO - 10.1016/j.microrel.2006.09.030

M3 - Article

AN - SCOPUS:34547170628

SN - 0026-2714

VL - 47

SP - 1195

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 8

ER -

Characterisation and passivation of interface defects in (1 0 0)-Si/SiO₂/HfO₂/TiN gate stacks

Abstract

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