Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

M. B. Mooney; P. K. Hurley; B. J. O'Sullivan; J. T. Beechinor; J. Y. Zhang; I. W. Boyd; P. V. Kelly; J. P. Sénateur; G. M. Crean; C. Jimenez; M. Paillous

doi:10.1016/S0167-9317(99)00389-5

Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

M. B. Mooney
, P. K. Hurley
, B. J. O'Sullivan
, J. T. Beechinor
, J. Y. Zhang
, I. W. Boyd
, P. V. Kelly
, J. P. Sénateur
, G. M. Crean
, C. Jimenez
, M. Paillous

Research output: Contribution to journal › Article › peer-review

Abstract

We report the physical and electrical characteristics of the first tantalum pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt)₄(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350 °C. Conventional C-V characteristics are exhibited by thick (200 angstroms to 1000 angstroms) as-deposited films, with dielectric constants of 17.4 to 24.

Original language	English
Pages (from-to)	283-286
Number of pages	4
Journal	Microelectronic Engineering
Volume	48
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00389-5
Publication status	Published - Sep 1999
Event	Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) - Kloster Banz, Ger Duration: 16 Jun 1999 → 19 Jun 1999

Access to Document

10.1016/S0167-9317(99)00389-5

Cite this

Mooney, M. B., Hurley, P. K., O'Sullivan, B. J., Beechinor, J. T., Zhang, J. Y., Boyd, I. W., Kelly, P. V., Sénateur, J. P., Crean, G. M., Jimenez, C., & Paillous, M. (1999). Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source. Microelectronic Engineering, 48(1), 283-286. https://doi.org/10.1016/S0167-9317(99)00389-5

@article{458d235c5d524429b799669cd172f117,

title = "Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source",

abstract = "We report the physical and electrical characteristics of the first tantalum pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt)4(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350 °C. Conventional C-V characteristics are exhibited by thick (200 angstroms to 1000 angstroms) as-deposited films, with dielectric constants of 17.4 to 24.",

author = "Mooney, \{M. B.\} and Hurley, \{P. K.\} and O'Sullivan, \{B. J.\} and Beechinor, \{J. T.\} and Zhang, \{J. Y.\} and Boyd, \{I. W.\} and Kelly, \{P. V.\} and S{\'e}nateur, \{J. P.\} and Crean, \{G. M.\} and C. Jimenez and M. Paillous",

year = "1999",

month = sep,

doi = "10.1016/S0167-9317(99)00389-5",

language = "English",

volume = "48",

pages = "283--286",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) ; Conference date: 16-06-1999 Through 19-06-1999",

}

Mooney, MB, Hurley, PK, O'Sullivan, BJ, Beechinor, JT, Zhang, JY, Boyd, IW, Kelly, PV, Sénateur, JP, Crean, GM, Jimenez, C & Paillous, M 1999, 'Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source', Microelectronic Engineering, vol. 48, no. 1, pp. 283-286. https://doi.org/10.1016/S0167-9317(99)00389-5

TY - JOUR

T1 - Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

AU - Mooney, M. B.

AU - Hurley, P. K.

AU - O'Sullivan, B. J.

AU - Beechinor, J. T.

AU - Zhang, J. Y.

AU - Boyd, I. W.

AU - Kelly, P. V.

AU - Sénateur, J. P.

AU - Crean, G. M.

AU - Jimenez, C.

AU - Paillous, M.

PY - 1999/9

Y1 - 1999/9

N2 - We report the physical and electrical characteristics of the first tantalum pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt)4(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350 °C. Conventional C-V characteristics are exhibited by thick (200 angstroms to 1000 angstroms) as-deposited films, with dielectric constants of 17.4 to 24.

AB - We report the physical and electrical characteristics of the first tantalum pentoxide dielectric films as deposited by the new technique of low pressure ultraviolet-assisted injection liquid source (UVILS) chemical vapour deposition (UVILS-CVD) using the precursor tantalum tetraethoxy dimethylaminoethoxide (Ta(OEt)4(dmae)). The films as deposited exhibit high leakage currents due to carbon impurities. Significant porosity is found at deposition temperatures below 350 °C. Conventional C-V characteristics are exhibited by thick (200 angstroms to 1000 angstroms) as-deposited films, with dielectric constants of 17.4 to 24.

UR - https://www.scopus.com/pages/publications/0033190233

U2 - 10.1016/S0167-9317(99)00389-5

DO - 10.1016/S0167-9317(99)00389-5

M3 - Article

AN - SCOPUS:0033190233

SN - 0167-9317

VL - 48

SP - 283

EP - 286

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99)

Y2 - 16 June 1999 through 19 June 1999

ER -

Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

Abstract

Access to Document

Other files and links

Fingerprint

Cite this