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Characterization of a 25V GaN d-HEMT Device through Large Signal Gate Charge Measurements and In-Converter Testing

  • Brendan O’sullivan
  • , Norbert Fiebig
  • , Fouad Benkhelifa
  • , Paul McCloskey
  • , Cian O’mathuna
  • , Séamus O’driscoll
  • Innovations for High Performance Microelectronics
  • Fraunhofer Institute for Applied Solid State Physics

Research output: Contribution to journal › Article › peer-review

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