Characterization of a junctionless diode

Ran Yu; Isabelle Ferain; Nima Dehdashti Akhavan; Pedram Razavi; Ray Duffy; Jean Pierre Colinge

doi:10.1063/1.3608150

Characterization of a junctionless diode

Ran Yu
, Isabelle Ferain
, Nima Dehdashti Akhavan
, Pedram Razavi
, Ray Duffy
, Jean Pierre Colinge

Research output: Contribution to journal › Article › peer-review

Abstract

A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 10⁸, an ideality factor of 1.09, and a reverse leakage current of 1 10^-14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (E_A). The turn-on voltage of the device can be tuned by JL transistor threshold voltage.

Original language	English
Article number	013502
Journal	Applied Physics Letters
Volume	99
Issue number	1
DOIs	https://doi.org/10.1063/1.3608150
Publication status	Published - 4 Jul 2011

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10.1063/1.3608150

https://hdl.handle.net/10468/4318Licence: CC BY-NC-ND

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title = "Characterization of a junctionless diode",

abstract = "A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 108, an ideality factor of 1.09, and a reverse leakage current of 1 10-14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (EA). The turn-on voltage of the device can be tuned by JL transistor threshold voltage.",

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AU - Yu, Ran

AU - Ferain, Isabelle

AU - Akhavan, Nima Dehdashti

AU - Razavi, Pedram

AU - Duffy, Ray

AU - Colinge, Jean Pierre

PY - 2011/7/4

Y1 - 2011/7/4

N2 - A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 108, an ideality factor of 1.09, and a reverse leakage current of 1 10-14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (EA). The turn-on voltage of the device can be tuned by JL transistor threshold voltage.

AB - A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither PN junction nor Schottky junction. The device is measured at different temperatures. The characteristics of the JL diode are essentially identical to those of a regular PN junction diode. The JL diode has an on/off current ratio of 108, an ideality factor of 1.09, and a reverse leakage current of 1 10-14 A at room temperature. The mechanism of the leakage current is discussed using the activation energy (EA). The turn-on voltage of the device can be tuned by JL transistor threshold voltage.

UR - https://www.scopus.com/pages/publications/79960491262

U2 - 10.1063/1.3608150

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VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

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Characterization of a junctionless diode

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