Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

C. Kelleher; R. Ginige; B. Corbett; G. Clarke

doi:10.1063/1.1835537

Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

C. Kelleher
, R. Ginige
, B. Corbett
, G. Clarke

Research output: Contribution to journal › Article › peer-review

Abstract

We compare the electrical and optical characteristics of mesa diodes based on In0.62 Ga0.38 As In0.45 Ga0.55 As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53 Ga0.47 As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage.

Original language	English
Pages (from-to)	6033-6035
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	24
DOIs	https://doi.org/10.1063/1.1835537
Publication status	Published - 13 Dec 2004

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https://hdl.handle.net/10468/4396Licence: CC BY-NC-ND

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title = "Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes",

abstract = "We compare the electrical and optical characteristics of mesa diodes based on In0.62 Ga0.38 As In0.45 Ga0.55 As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53 Ga0.47 As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage.",

author = "C. Kelleher and R. Ginige and B. Corbett and G. Clarke",

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doi = "10.1063/1.1835537",

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AU - Kelleher, C.

AU - Ginige, R.

AU - Corbett, B.

AU - Clarke, G.

PY - 2004/12/13

Y1 - 2004/12/13

N2 - We compare the electrical and optical characteristics of mesa diodes based on In0.62 Ga0.38 As In0.45 Ga0.55 As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53 Ga0.47 As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage.

AB - We compare the electrical and optical characteristics of mesa diodes based on In0.62 Ga0.38 As In0.45 Ga0.55 As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53 Ga0.47 As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage.

UR - https://www.scopus.com/pages/publications/20444439953

U2 - 10.1063/1.1835537

DO - 10.1063/1.1835537

M3 - Article

AN - SCOPUS:20444439953

SN - 0003-6951

VL - 85

SP - 6033

EP - 6035

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

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