Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

  • R. T. Green
  • , I. J. Luxmoore
  • , K. B. Lee
  • , P. A. Houston
  • , F. Ranalli
  • , T. Wang
  • , P. J. Parbrook
  • , M. J. Uren
  • , D. J. Wallis
  • , T. Martin

Research output: Contribution to journal › Article › peer-review

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