Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Farzan Gity; Ki Yeol Byun; Ko Hsin Lee; Karim Cherkaoui; John M. Hayes; Alan P. Morrison; Cindy Colinge; Brian Corbett

doi:10.1063/1.3688174

Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Farzan Gity
, Ki Yeol Byun
, Ko Hsin Lee
, Karim Cherkaoui
, John M. Hayes
, Alan P. Morrison
, Cindy Colinge
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400° C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being >8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T ≤ 400° C) is an attractive option for heterogeneous integration.

Original language	English
Article number	092102
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3688174
Publication status	Published - 27 Feb 2012

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10.1063/1.3688174

https://hdl.handle.net/10468/4302Licence: CC BY-NC-ND

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title = "Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation",

abstract = "The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400° C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being >8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T ≤ 400° C) is an attractive option for heterogeneous integration.",

author = "Farzan Gity and \{Yeol Byun\}, Ki and Lee, \{Ko Hsin\} and Karim Cherkaoui and Hayes, \{John M.\} and Morrison, \{Alan P.\} and Cindy Colinge and Brian Corbett",

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AU - Gity, Farzan

AU - Yeol Byun, Ki

AU - Lee, Ko Hsin

AU - Cherkaoui, Karim

AU - Hayes, John M.

AU - Morrison, Alan P.

AU - Colinge, Cindy

AU - Corbett, Brian

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400° C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being >8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T ≤ 400° C) is an attractive option for heterogeneous integration.

AB - The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400° C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being >8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T ≤ 400° C) is an attractive option for heterogeneous integration.

UR - https://www.scopus.com/pages/publications/84863238063

U2 - 10.1063/1.3688174

DO - 10.1063/1.3688174

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

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