Abstract
An inherent limit to Single Photon avalanche diodes (SPAD) sensitivity is the dark count caused by thermally generated carriers. To reduce the dark count, commercial detectors rely on large breakdown voltages and complex doping to insure the junction electric field is kept to minimum. The diodes used in this study are designed to have a breakdown voltage below 30 volts. Ambient light multiplication gain are obtained for large area SPAD detectors operated in avalanche mode.
| Original language | English |
|---|---|
| Pages (from-to) | 17-18 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| Publication status | Published - 2000 |
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