@inbook{5f189433e29a4d7dbc1ce677477627f8,
title = "Characterization of nickel germanide Schottky contacts for the fabrication of germanium p-channel MOSFETs",
abstract = "Schottky contacts offer the possibility of an implantless fabrication process for p-channel germanium MOSFETs. Nickel germanide Schottky contacts, formed by rapid thermal annealing of thin nickel films, have been characterized on n-type germanium wafers for a range of RTA temperatures. The highest Schottky barrier heights for electrons (φBn = 0.6-0.7 eV) were obtained for RTA temperatures of approximately 300°C. For this RTA schedule, the corresponding barrier height for holes is close to zero, ideal for Schottky contacted p-channel germanium MOSFETs. When the RTA temperature was increased to 400°C, a dramatic reduction in electron barrier height (φBn < 0.1 eV) was observed. This RTA schedule, therefore, appears ideal for ohmic source/drain contacts to n-channel germanium MOSFETs. From sheet resistance measurements and XRD characterization, nickel germanide formation was found to occur at 300°C and above. The NiGe phase was dominant for RTA temperatures up to at least 435°C.",
author = "Gajula, \{D. R.\} and McNeill, \{D. W.\} and P. Baine and P. Fleming and R. Duffy and Armstrong, \{B. M.\}",
year = "2011",
doi = "10.1149/1.3569943",
language = "English",
isbn = "9781566778640",
series = "ECS Transactions",
number = "3",
pages = "521--527",
booktitle = "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3",
edition = "3",
note = "Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",
}