Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)

  • J. Franco
  • , V. Putcha
  • , A. Vais
  • , S. Sioncke
  • , N. Waldron
  • , D. Zhou
  • , G. Rzepa
  • , Ph J. Roussel
  • , G. Groeseneken
  • , M. Heyns
  • , N. Collaert
  • , D. Linten
  • , T. Grasser
  • , B. Kaczer

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

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