Skip to main navigation Skip to search Skip to main content

Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in situ methods

  • Janis Bukins
  • , Gunta Kunakova
  • , Pavels Birjukovs
  • , Juris Prikulis
  • , Justin Varghese
  • , J. D. Holmes
  • , Donats Erts

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

Conductive AFM and in situ methods were used to determine contact resistance and resistivity of individual Sb2S3 nanowires. Nanowires were deposited on oxidized Si surface for in situ measurements and on Si surface with macroelectrodes for conductive AFM (C-AFM) measurements. Contact resistance was determined by measurement of I(V) characteristics at different distances from the nanowire contact with the macroelectrode and resistivity of nanowires was determined. Sb2S3 is a soft material with low adhesion force to the surface and therefore special precautions were taken during measurements.

Original languageEnglish
Title of host publicationGlobal Research and Education
Pages106-109
Number of pages4
DOIs
Publication statusPublished - 2011
Event9th International Conference on Global Research and Education, INTER-ACADEMIA 2010 - Riga, Latvia
Duration: 9 Aug 201012 Aug 2010

Publication series

NameAdvanced Materials Research
Volume222
ISSN (Print)1022-6680

Conference

Conference9th International Conference on Global Research and Education, INTER-ACADEMIA 2010
Country/TerritoryLatvia
CityRiga
Period9/08/1012/08/10

Keywords

  • Conductive AFM
  • Nanowires
  • Resistivity
  • SbS

Fingerprint

Dive into the research topics of 'Characterization of resistivity of Sb2S3 semiconductor nanowires by conductive AFM and in situ methods'. Together they form a unique fingerprint.

Cite this