Characterizing stress in ultrathin silicon wafers

Indrajit Paul; Bivragh Majeed; Kafil M. Razeeb; John Barton

doi:10.1063/1.2336212

Characterizing stress in ultrathin silicon wafers

Indrajit Paul
, Bivragh Majeed
, Kafil M. Razeeb
, John Barton

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 μm thick wafer was found to be less than 2 mm using the current grinding process.

Original language	English
Article number	073506
Journal	Applied Physics Letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2336212
Publication status	Published - 2006

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https://hdl.handle.net/10468/4387Licence: CC BY-NC-ND

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title = "Characterizing stress in ultrathin silicon wafers",

abstract = "The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 μm thick wafer was found to be less than 2 mm using the current grinding process.",

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AB - The aim of this letter is to calculate the mechanical grinding induced bow and stress in ultrathin silicon wafers. The reverse leakage current of a p-n junction diode fabricated on a 4 in. silicon wafer was measured for wafers thinned to various thicknesses. A correlation with the residual stress was obtained through band gap narrowing effect. The analytical results were compared with experimental bow measurements using a laser profiler. The bow in 50 μm thick wafer was found to be less than 2 mm using the current grinding process.

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Characterizing stress in ultrathin silicon wafers

Abstract

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