Skip to main navigation Skip to search Skip to main content

Charge Trapping Characterization of LaLuO3/p-Si Interfaces at Cryogenic Temperatures

  • Paul Hurley

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
JournalMeeting Abstracts
DOIs
Publication statusPublished - 2014

Keywords

  • Materials science
  • Dielectric
  • Amorphous solid
  • Ternary operation
  • Isothermal process
  • Gate dielectric
  • Substrate (aquarium)
  • Optoelectronics
  • High-κ dielectric
  • Gate oxide
  • Analytical Chemistry (journal)
  • Transistor
  • Chemistry
  • Electrical engineering
  • Voltage
  • Crystallography
  • Physics
  • Oceanography
  • Chromatography
  • Geology
  • Computer science
  • Thermodynamics
  • Programming language
  • Engineering

Cite this