Charge trapping characterization of LaLuO3/p-Si interfaces at cryogenic temperatures

I. P. Tyagulskyy; S. I. Tiagulskyi; A. N. Nazarov; V. S. Lysenko; P. K. Hurley; K. Cherkaoui; S. Monaghan

doi:10.1149/06102.0055ecst

Charge trapping characterization of LaLuO₃/p-Si interfaces at cryogenic temperatures

I. P. Tyagulskyy
, S. I. Tiagulskyi
, A. N. Nazarov
, V. S. Lysenko
, P. K. Hurley
, K. Cherkaoui
, S. Monaghan

Research output: Contribution to journal › Article › peer-review

Abstract

The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO₃/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release and isothermal transient emission currents were used to characterize shallow hole traps. Activation energies and densities of shallow hole traps have been determined.

Original language	English
Pages (from-to)	55-59
Number of pages	5
Journal	ECS Transactions
Volume	61
Issue number	2
DOIs	https://doi.org/10.1149/06102.0055ecst
Publication status	Published - 2014
Event	6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States Duration: 11 May 2014 → 15 May 2014

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10.1149/06102.0055ecst

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title = "Charge trapping characterization of LaLuO3/p-Si interfaces at cryogenic temperatures",

abstract = "The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO3/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release and isothermal transient emission currents were used to characterize shallow hole traps. Activation energies and densities of shallow hole traps have been determined.",

author = "Tyagulskyy, \{I. P.\} and Tiagulskyi, \{S. I.\} and Nazarov, \{A. N.\} and Lysenko, \{V. S.\} and Hurley, \{P. K.\} and K. Cherkaoui and S. Monaghan",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06102.0055ecst",

language = "English",

volume = "61",

pages = "55--59",

journal = "ECS Transactions",

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T1 - Charge trapping characterization of LaLuO3/p-Si interfaces at cryogenic temperatures

AU - Tyagulskyy, I. P.

AU - Tiagulskyi, S. I.

AU - Nazarov, A. N.

AU - Lysenko, V. S.

AU - Hurley, P. K.

AU - Cherkaoui, K.

AU - Monaghan, S.

PY - 2014

Y1 - 2014

N2 - The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO3/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release and isothermal transient emission currents were used to characterize shallow hole traps. Activation energies and densities of shallow hole traps have been determined.

AB - The paper focuses on the experimental investigation of charge trapping and emission from shallow traps in the transition layer of the LaLuO3/p-Si structures in the temperature range 6-40K. The techniques of thermally activated charge release and isothermal transient emission currents were used to characterize shallow hole traps. Activation energies and densities of shallow hole traps have been determined.

UR - https://www.scopus.com/pages/publications/84925067903

U2 - 10.1149/06102.0055ecst

DO - 10.1149/06102.0055ecst

M3 - Article

AN - SCOPUS:84925067903

SN - 1938-5862

VL - 61

SP - 55

EP - 59

JO - ECS Transactions

JF - ECS Transactions

IS - 2

T2 - 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Charge trapping characterization of LaLuO₃/p-Si interfaces at cryogenic temperatures

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