Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors

Rathnait D Long; Byungha Shin; Scott Monaghan; Karim Cherkaoui; J Cagnon; S Stemmer; Paul C McIntyre; Paul K Hurley

Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors

Rathnait D Long
, Byungha Shin
, Scott Monaghan
, Karim Cherkaoui
, J Cagnon
, S Stemmer
, Paul C McIntyre
, Paul K Hurley

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Journal of the Electrochemical Society
Publication status	Published - 2011

Cite this

@article{e38637075b5345aeb85c046a22e04d0b,

title = "Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors",

author = "Long, \{Rathnait D\} and Byungha Shin and Scott Monaghan and Karim Cherkaoui and J Cagnon and S Stemmer and McIntyre, \{Paul C\} and Hurley, \{Paul K\}",

year = "2011",

language = "Undefined/Unknown",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

}

TY - JOUR

T1 - Charged Defect Quantification in Pt/Al2O3/In0. 53Ga0. 47As/InP MOS Capacitors

AU - Long, Rathnait D

AU - Shin, Byungha

AU - Monaghan, Scott

AU - Cherkaoui, Karim

AU - Cagnon, J

AU - Stemmer, S

AU - McIntyre, Paul C

AU - Hurley, Paul K

PY - 2011

Y1 - 2011

M3 - Article

SN - 0013-4651

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

ER -