Cleaved-facet violet laser diodes with lattice-matched Al0.82 In0.18 N/GaN multilayers as n -cladding

R. Charash; H. Kim-Chauveau; J. M. Lamy; M. Akther; P. P. Maaskant; E. Frayssinet; P. De Mierry; A. D. Dräger; J. Y. Duboz; A. Hangleiter; B. Corbett

doi:10.1063/1.3589974

Cleaved-facet violet laser diodes with lattice-matched Al_0.82 In_0.18 N/GaN multilayers as n -cladding

R. Charash
, H. Kim-Chauveau
, J. M. Lamy
, M. Akther
, P. P. Maaskant
, E. Frayssinet
, P. De Mierry
, A. D. Dräger
, J. Y. Duboz
, A. Hangleiter
, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al_0.82 In_0.18 N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to Vⁿ, where n∼3 at current densities appropriate to laser operation.

Original language	English
Article number	201112
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3589974
Publication status	Published - 16 May 2011

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10.1063/1.3589974

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title = "Cleaved-facet violet laser diodes with lattice-matched Al0.82 In0.18 N/GaN multilayers as n -cladding",

abstract = "Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82 In0.18 N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to Vn, where n∼3 at current densities appropriate to laser operation.",

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year = "2011",

month = may,

day = "16",

doi = "10.1063/1.3589974",

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T1 - Cleaved-facet violet laser diodes with lattice-matched Al0.82 In0.18 N/GaN multilayers as n -cladding

AU - Charash, R.

AU - Kim-Chauveau, H.

AU - Lamy, J. M.

AU - Akther, M.

AU - Maaskant, P. P.

AU - Frayssinet, E.

AU - De Mierry, P.

AU - Dräger, A. D.

AU - Duboz, J. Y.

AU - Hangleiter, A.

AU - Corbett, B.

PY - 2011/5/16

Y1 - 2011/5/16

N2 - Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82 In0.18 N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to Vn, where n∼3 at current densities appropriate to laser operation.

AB - Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82 In0.18 N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to Vn, where n∼3 at current densities appropriate to laser operation.

UR - https://www.scopus.com/pages/publications/79957544680

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DO - 10.1063/1.3589974

M3 - Article

AN - SCOPUS:79957544680

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201112

ER -

Cleaved-facet violet laser diodes with lattice-matched Al_0.82 In_0.18 N/GaN multilayers as n -cladding

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