CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu; B. De Jaeger; D. M. Fleetwood; P. Wambacq; M. Zhao; B. Parvais; N. Waldron; N. Collaert; A. Alian; V. Putcha; A. Khaled; R. Rodriguez; A. Sibaja-Hernandez; S. Chang; E. Simoen; S. E. Zhao

doi:10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

U. Peralagu
, B. De Jaeger
, D. M. Fleetwood
, P. Wambacq
, M. Zhao
, B. Parvais
, N. Waldron
, N. Collaert
, A. Alian
, V. Putcha
, A. Khaled
, R. Rodriguez
, A. Sibaja-Hernandez
, S. Chang
, E. Simoen
, S. E. Zhao

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (R_C) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (V_BD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μ_FE), >2000 cm²/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993582
Publication status	Published - Dec 2019
Externally published	Yes
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN (Print)	0163-1918

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	7/12/19 → 11/12/19

Access to Document

10.1109/IEDM19573.2019.8993582

Cite this

Peralagu, U., De Jaeger, B., Fleetwood, D. M., Wambacq, P., Zhao, M., Parvais, B., Waldron, N., Collaert, N., Alian, A., Putcha, V., Khaled, A., Rodriguez, R., Sibaja-Hernandez, A., Chang, S., Simoen, E., & Zhao, S. E. (2019). CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 Article 8993582 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19573.2019.8993582

@inproceedings{e5d88a0dad754883961b9cd04a51ac32,

title = "CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance",

abstract = "We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.",

author = "U. Peralagu and \{De Jaeger\}, B. and Fleetwood, \{D. M.\} and P. Wambacq and M. Zhao and B. Parvais and N. Waldron and N. Collaert and A. Alian and V. Putcha and A. Khaled and R. Rodriguez and A. Sibaja-Hernandez and S. Chang and E. Simoen and Zhao, \{S. E.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

year = "2019",

month = dec,

doi = "10.1109/IEDM19573.2019.8993582",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

address = "United States",

}

Peralagu, U, De Jaeger, B, Fleetwood, DM, Wambacq, P, Zhao, M, Parvais, B, Waldron, N, Collaert, N, Alian, A, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Chang, S, Simoen, E & Zhao, SE 2019, CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993582, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, Institute of Electrical and Electronics Engineers Inc., 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. / Peralagu, U.; De Jaeger, B.; Fleetwood, D. M. et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8993582 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - CMOS-compatible GaN-based devices on 200mm-Si for RF applications

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

AU - Peralagu, U.

AU - De Jaeger, B.

AU - Fleetwood, D. M.

AU - Wambacq, P.

AU - Zhao, M.

AU - Parvais, B.

AU - Waldron, N.

AU - Collaert, N.

AU - Alian, A.

AU - Putcha, V.

AU - Khaled, A.

AU - Rodriguez, R.

AU - Sibaja-Hernandez, A.

AU - Chang, S.

AU - Simoen, E.

AU - Zhao, S. E.

PY - 2019/12

Y1 - 2019/12

N2 - We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

AB - We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (RC) of 0.14 Ω mm for a non-Au, low thermal budget (<600 °C) contact scheme and a high vertical breakdown voltage (VBD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (μFE), >2000 cm2/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

UR - https://www.scopus.com/pages/publications/85081051184

U2 - 10.1109/IEDM19573.2019.8993582

DO - 10.1109/IEDM19573.2019.8993582

M3 - Conference proceeding

AN - SCOPUS:85081051184

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 7 December 2019 through 11 December 2019

ER -

Peralagu U, De Jaeger B, Fleetwood DM, Wambacq P, Zhao M, Parvais B et al. CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8993582. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19573.2019.8993582

CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

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