Co-designed high-efficiency GaN filter power amplifier

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Abstract

In this paper, we demonstrate a high-efficiency 4.7 GHz 4-W power amplifier with input and output matching networks designed as complex-impedance port filters, within a sub-6 GHz 5G band. The port impedances are determined by the load- and source-pull of a GaN HEMT for an efficiency-power tradeoff. The measured performance shows PAE=55% over a 9% fractional bandwidth, with 10 dB rejection at 4.5 and 5 GHz. Comparison with a cascaded PA-filter circuit shows 25% lower loss with a simultaneous 20% reduction in footprint.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages115-118
Number of pages4
ISBN (Electronic)9781728168159
DOIs
Publication statusPublished - Aug 2020
Externally publishedYes
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 4 Aug 20206 Aug 2020

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/TerritoryUnited States
CityVirtual, Los Angeles
Period4/08/206/08/20

Keywords

  • 5G
  • Ceramic
  • Coaxial resonators
  • GaN
  • Power amplifiers
  • RF filters

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