TY - JOUR
T1 - Compact electroabsorption modulators for photonic integrated circuits, using an isolated pedestal contact scheme
AU - Daunt, Chris L.M.
AU - O'Callaghan, James
AU - Lee, Ko Hsin
AU - Yang, Hua
AU - Young, Robert J.
AU - Thomas, Kevin
AU - Pelucchi, Emanuele
AU - Corbett, Brian
AU - Peters, Frank H.
PY - 2012
Y1 - 2012
N2 - We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-KΩ resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm 2, while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f 3dB bandwidth of 42 GHz.
AB - We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-KΩ resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm 2, while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f 3dB bandwidth of 42 GHz.
KW - Electroabsorption modulator (EAM)
KW - Integrated optoelectronics
KW - Optical device fabrication
UR - https://www.scopus.com/pages/publications/84863116314
U2 - 10.1109/LPT.2011.2179025
DO - 10.1109/LPT.2011.2179025
M3 - Article
AN - SCOPUS:84863116314
SN - 1041-1135
VL - 24
SP - 356
EP - 358
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 5
M1 - 6099556
ER -