Compact model development for a new nonvolatile memory cell architecture

Mike O'Shea; Russell Duane; Diarmuid McCarthy; Kevin G. McCarthy; Ann Concannon; Alan Mathewson

doi:10.1109/TSM.2003.811576

Compact model development for a new nonvolatile memory cell architecture

Mike O'Shea
, Russell Duane
, Diarmuid McCarthy
, Kevin G. McCarthy
, Ann Concannon
, Alan Mathewson

Research output: Contribution to journal › Article › peer-review

Abstract

A compact model development for a new nonvolatile memory cell architecture is discussed. The model is based on the physical structure of the device and allows an insight into the device operation. It is shown that the model is accurate over the full range operation of the cell.

Original language	English
Pages (from-to)	215-219
Number of pages	5
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	16
Issue number	2
DOIs	https://doi.org/10.1109/TSM.2003.811576
Publication status	Published - May 2003

Keywords

Memories
Modeling
Silicon

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10.1109/TSM.2003.811576

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title = "Compact model development for a new nonvolatile memory cell architecture",

abstract = "A compact model development for a new nonvolatile memory cell architecture is discussed. The model is based on the physical structure of the device and allows an insight into the device operation. It is shown that the model is accurate over the full range operation of the cell.",

keywords = "Memories, Modeling, Silicon",

author = "Mike O'Shea and Russell Duane and Diarmuid McCarthy and McCarthy, \{Kevin G.\} and Ann Concannon and Alan Mathewson",

year = "2003",

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doi = "10.1109/TSM.2003.811576",

language = "English",

volume = "16",

pages = "215--219",

journal = "IEEE Transactions on Semiconductor Manufacturing",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Compact model development for a new nonvolatile memory cell architecture

AU - O'Shea, Mike

AU - Duane, Russell

AU - McCarthy, Diarmuid

AU - McCarthy, Kevin G.

AU - Concannon, Ann

AU - Mathewson, Alan

PY - 2003/5

Y1 - 2003/5

N2 - A compact model development for a new nonvolatile memory cell architecture is discussed. The model is based on the physical structure of the device and allows an insight into the device operation. It is shown that the model is accurate over the full range operation of the cell.

AB - A compact model development for a new nonvolatile memory cell architecture is discussed. The model is based on the physical structure of the device and allows an insight into the device operation. It is shown that the model is accurate over the full range operation of the cell.

KW - Memories

KW - Modeling

KW - Silicon

UR - https://www.scopus.com/pages/publications/0038291936

U2 - 10.1109/TSM.2003.811576

DO - 10.1109/TSM.2003.811576

M3 - Article

AN - SCOPUS:0038291936

SN - 0894-6507

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SP - 215

EP - 219

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 2

ER -

Compact model development for a new nonvolatile memory cell architecture

Abstract

Keywords

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