@inproceedings{1437f0e41a6d4091861d0d903ee1e331,
title = "Compact modelling of pocket-implanted MOSFETs",
abstract = "We show by device simulations and experiments, how a consistent modelling of both DC and AC characteristics for pocket-implanted MOSFETs can be achieved using a singleΔL value, which is extracted from measurements of CBG in accumulation.",
author = "Scholten, \{A. J.\} and R. Duffy and \{Van Langevelde\}, R. and Klaassen, \{D. B.M.\}",
note = "Publisher Copyright: {\textcopyright} 2001 Non IEEE.; 31st European Solid-State Device Research Conference, ESSDERC 2001 ; Conference date: 11-09-2001 Through 13-09-2001",
year = "2001",
doi = "10.1109/ESSDERC.2001.195263",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "311--314",
editor = "Heiner Ryssel and Gerhard Wachutka and Herbert Grunbacher",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
}