Abstract
Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The FeIn trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.
| Original language | English |
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| Pages | 59-62 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: 29 Apr 1996 → 3 May 1996 |
Conference
| Conference | Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 |
|---|---|
| City | Toulouse, Fr |
| Period | 29/04/96 → 3/05/96 |
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