Compensation origins in II-VI CZT materials

A. Zumbiehl; S. Mergui; M. Ayoub; M. Hage-Ali; A. Zerrai; K. Cherkaoui; G. Marrakchi; Y. Darici

doi:10.1016/S0921-5107(99)00394-3

Compensation origins in II-VI CZT materials

A. Zumbiehl
, S. Mergui
, M. Ayoub
, M. Hage-Ali
, A. Zerrai
, K. Cherkaoui
, G. Marrakchi
, Y. Darici

Research output: Contribution to journal › Article › peer-review

Abstract

It is well known that II-VI CdTe, and CdZnTe (CZT) materials suffer from the presence of cadmium vacancies (V-Cd) and their complexes with impurities and defects, which lead to low resistivity and trapping. These defects are known generally as the A-centers, around 0.1-0.2 eV. In order to increase the resistivity, intentional and non intentional chemical and physical compensations are conducted; for CdTe, halogens (Cl, Br, I) or In are generally used, while for CZT, the compensation origins are still unknown. In this paper, we try to study the compensation by measuring deep levels and very shallow levels at temperatures as low as helium temperature by photoluminescence (PL) and photoinduced current transient spectroscopy (PICTS), and model the resistivity in order to clarify the origins of the compensation and the high resistivity in CZT materials.

Original language	English
Pages (from-to)	297-300
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	71
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(99)00394-3
Publication status	Published - 14 Feb 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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title = "Compensation origins in II-VI CZT materials",

abstract = "It is well known that II-VI CdTe, and CdZnTe (CZT) materials suffer from the presence of cadmium vacancies (V-Cd) and their complexes with impurities and defects, which lead to low resistivity and trapping. These defects are known generally as the A-centers, around 0.1-0.2 eV. In order to increase the resistivity, intentional and non intentional chemical and physical compensations are conducted; for CdTe, halogens (Cl, Br, I) or In are generally used, while for CZT, the compensation origins are still unknown. In this paper, we try to study the compensation by measuring deep levels and very shallow levels at temperatures as low as helium temperature by photoluminescence (PL) and photoinduced current transient spectroscopy (PICTS), and model the resistivity in order to clarify the origins of the compensation and the high resistivity in CZT materials.",

author = "A. Zumbiehl and S. Mergui and M. Ayoub and M. Hage-Ali and A. Zerrai and K. Cherkaoui and G. Marrakchi and Y. Darici",

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doi = "10.1016/S0921-5107(99)00394-3",

language = "English",

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note = "The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - Compensation origins in II-VI CZT materials

AU - Zumbiehl, A.

AU - Mergui, S.

AU - Ayoub, M.

AU - Hage-Ali, M.

AU - Zerrai, A.

AU - Cherkaoui, K.

AU - Marrakchi, G.

AU - Darici, Y.

PY - 2000/2/14

Y1 - 2000/2/14

N2 - It is well known that II-VI CdTe, and CdZnTe (CZT) materials suffer from the presence of cadmium vacancies (V-Cd) and their complexes with impurities and defects, which lead to low resistivity and trapping. These defects are known generally as the A-centers, around 0.1-0.2 eV. In order to increase the resistivity, intentional and non intentional chemical and physical compensations are conducted; for CdTe, halogens (Cl, Br, I) or In are generally used, while for CZT, the compensation origins are still unknown. In this paper, we try to study the compensation by measuring deep levels and very shallow levels at temperatures as low as helium temperature by photoluminescence (PL) and photoinduced current transient spectroscopy (PICTS), and model the resistivity in order to clarify the origins of the compensation and the high resistivity in CZT materials.

AB - It is well known that II-VI CdTe, and CdZnTe (CZT) materials suffer from the presence of cadmium vacancies (V-Cd) and their complexes with impurities and defects, which lead to low resistivity and trapping. These defects are known generally as the A-centers, around 0.1-0.2 eV. In order to increase the resistivity, intentional and non intentional chemical and physical compensations are conducted; for CdTe, halogens (Cl, Br, I) or In are generally used, while for CZT, the compensation origins are still unknown. In this paper, we try to study the compensation by measuring deep levels and very shallow levels at temperatures as low as helium temperature by photoluminescence (PL) and photoinduced current transient spectroscopy (PICTS), and model the resistivity in order to clarify the origins of the compensation and the high resistivity in CZT materials.

UR - https://www.scopus.com/pages/publications/0033897009

U2 - 10.1016/S0921-5107(99)00394-3

DO - 10.1016/S0921-5107(99)00394-3

M3 - Article

AN - SCOPUS:0033897009

SN - 0921-5107

VL - 71

SP - 297

EP - 300

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

Compensation origins in II-VI CZT materials

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