Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

N. Pavarelli; T. J. Ochalski; H. Y. Liu; K. Gradkowski; M. Schmidt; D. P. Williams; D. J. Mowbray; G. Huyet

doi:10.1063/1.4769431

Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

N. Pavarelli
, T. J. Ochalski
, H. Y. Liu
, K. Gradkowski
, M. Schmidt
, D. P. Williams
, D. J. Mowbray
, G. Huyet

Research output: Contribution to journal › Article › peer-review

Abstract

The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure.

Original language	English
Article number	231109
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4769431
Publication status	Published - 3 Dec 2012

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title = "Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots",

abstract = "The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure.",

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doi = "10.1063/1.4769431",

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T1 - Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

AU - Pavarelli, N.

AU - Ochalski, T. J.

AU - Liu, H. Y.

AU - Gradkowski, K.

AU - Schmidt, M.

AU - Williams, D. P.

AU - Mowbray, D. J.

AU - Huyet, G.

PY - 2012/12/3

Y1 - 2012/12/3

N2 - The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure.

AB - The optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure.

UR - https://www.scopus.com/pages/publications/84870900471

U2 - 10.1063/1.4769431

DO - 10.1063/1.4769431

M3 - Article

AN - SCOPUS:84870900471

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231109

ER -

Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

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