Complex emission dynamics of type-II GaSb/GaAs quantum dots

Kamil Gradkowski; Nicola Pavarelli; Tomasz J. Ochalski; David P. Williams; Jun Tatebayashi; Guillaume Huyet; Eoin P. O'Reilly; Diana L. Huffaker

doi:10.1063/1.3202419

Complex emission dynamics of type-II GaSb/GaAs quantum dots

Kamil Gradkowski
, Nicola Pavarelli
, Tomasz J. Ochalski
, David P. Williams
, Jun Tatebayashi
, Guillaume Huyet
, Eoin P. O'Reilly
, Diana L. Huffaker

Research output: Contribution to journal › Article › peer-review

Abstract

Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies.

Original language	English
Article number	061102
Journal	Applied Physics Letters
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.3202419
Publication status	Published - 2009

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10.1063/1.3202419

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title = "Complex emission dynamics of type-II GaSb/GaAs quantum dots",

abstract = "Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies.",

author = "Kamil Gradkowski and Nicola Pavarelli and Ochalski, \{Tomasz J.\} and Williams, \{David P.\} and Jun Tatebayashi and Guillaume Huyet and O'Reilly, \{Eoin P.\} and Huffaker, \{Diana L.\}",

year = "2009",

doi = "10.1063/1.3202419",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Complex emission dynamics of type-II GaSb/GaAs quantum dots

AU - Gradkowski, Kamil

AU - Pavarelli, Nicola

AU - Ochalski, Tomasz J.

AU - Williams, David P.

AU - Tatebayashi, Jun

AU - Huyet, Guillaume

AU - O'Reilly, Eoin P.

AU - Huffaker, Diana L.

PY - 2009

Y1 - 2009

N2 - Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies.

AB - Optical properties of the GaSb/GaAs quantum dot system are investigated using a time-resolved photoluminescence technique. In this type-II heterostructure the carriers of different species are spatially separated and, as a consequence, a smooth evolution of both the emission wavelength and decay timescale is observed. A wavelength shift of 170 nm is measured simultaneously with the progressive timescale change from 100 ps to 23 ns. These phenomena are explained by the evolution of the carrier density, which brings a modification to the optical transition probability as well as the shift in the emission toward the higher energies.

UR - https://www.scopus.com/pages/publications/69049098985

U2 - 10.1063/1.3202419

DO - 10.1063/1.3202419

M3 - Article

AN - SCOPUS:69049098985

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061102

ER -

Complex emission dynamics of type-II GaSb/GaAs quantum dots

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