Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

P. Favia; O. Richard; J. Geypen; N. Waldron; C. Merckling; W. Guo; M. Caymax; H. Bender

doi:10.1088/1742-6596/471/1/012010

Composition variation of In_1-xGa_xAs epitaxially grown in narrow trenches on Si

P. Favia
, O. Richard
, J. Geypen
, N. Waldron
, C. Merckling
, W. Guo
, M. Caymax
, H. Bender

Interuniversitair Micro-Elektronica Centrum

Research output: Contribution to journal › Article › peer-review

Abstract

In this work we investigate the indium content in In_1-xGa _xAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.

Original language	English
Article number	012010
Journal	Journal of Physics: Conference Series
Volume	471
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/471/1/012010
Publication status	Published - 2013
Externally published	Yes
Event	18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom Duration: 7 Apr 2013 → 11 Apr 2013

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10.1088/1742-6596/471/1/012010

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@article{0ffbb2a4cf1f4f8981a7c375038dd5e9,

title = "Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si",

abstract = "In this work we investigate the indium content in In1-xGa xAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.",

author = "P. Favia and O. Richard and J. Geypen and N. Waldron and C. Merckling and W. Guo and M. Caymax and H. Bender",

year = "2013",

doi = "10.1088/1742-6596/471/1/012010",

language = "English",

volume = "471",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "18th Microscopy of Semiconducting Materials Conference, MSM 2013 ; Conference date: 07-04-2013 Through 11-04-2013",

}

TY - JOUR

T1 - Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

AU - Favia, P.

AU - Richard, O.

AU - Geypen, J.

AU - Waldron, N.

AU - Merckling, C.

AU - Guo, W.

AU - Caymax, M.

AU - Bender, H.

PY - 2013

Y1 - 2013

N2 - In this work we investigate the indium content in In1-xGa xAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.

AB - In this work we investigate the indium content in In1-xGa xAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.

UR - https://www.scopus.com/pages/publications/84890584559

U2 - 10.1088/1742-6596/471/1/012010

DO - 10.1088/1742-6596/471/1/012010

M3 - Article

AN - SCOPUS:84890584559

SN - 1742-6588

VL - 471

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012010

T2 - 18th Microscopy of Semiconducting Materials Conference, MSM 2013

Y2 - 7 April 2013 through 11 April 2013

ER -

Composition variation of In_1-xGa_xAs epitaxially grown in narrow trenches on Si

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