Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Ki Yeol Byun; Pete Fleming; Nick Bennett; Farzan Gity; Patrick McNally; Michael Morris; Isabelle Ferain; Cindy Colinge

doi:10.1063/1.3601355

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Ki Yeol Byun
, Pete Fleming
, Nick Bennett
, Farzan Gity
, Patrick McNally
, Michael Morris
, Isabelle Ferain
, Cindy Colinge

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy.

Original language	English
Article number	123529
Journal	Journal of Applied Physics
Volume	109
Issue number	12
DOIs	https://doi.org/10.1063/1.3601355
Publication status	Published - 15 Jun 2011

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10.1063/1.3601355

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abstract = "In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy.",

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AU - Byun, Ki Yeol

AU - Fleming, Pete

AU - Bennett, Nick

AU - Gity, Farzan

AU - McNally, Patrick

AU - Morris, Michael

AU - Ferain, Isabelle

AU - Colinge, Cindy

PY - 2011/6/15

Y1 - 2011/6/15

N2 - In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy.

AB - In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy.

UR - https://www.scopus.com/pages/publications/79960174525

U2 - 10.1063/1.3601355

DO - 10.1063/1.3601355

M3 - Article

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VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Abstract

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