TY - CHAP
T1 - Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes
AU - Arkani, Reza
AU - Broderick, Christopher A.
AU - O'Reilly, Eoin P.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/2
Y1 - 2018/7/2
N2 - We present a theoretical investigation of the optical properties of metamorphic InNy(As1-xSbx)1-y/AlzIn1-z As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of AlzIn1-z As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In. As1-xSbx QWs having emission wavelengths ∼> 3 μ m on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2μ m, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4μ m. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InNyAs1-xSbx)1-y/AlzIn1-z As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.
AB - We present a theoretical investigation of the optical properties of metamorphic InNy(As1-xSbx)1-y/AlzIn1-z As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of AlzIn1-z As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In. As1-xSbx QWs having emission wavelengths ∼> 3 μ m on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2μ m, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4μ m. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InNyAs1-xSbx)1-y/AlzIn1-z As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.
UR - https://www.scopus.com/pages/publications/85062287894
U2 - 10.1109/NANO.2018.8626250
DO - 10.1109/NANO.2018.8626250
M3 - Chapter
AN - SCOPUS:85062287894
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 18th International Conference on Nanotechnology, NANO 2018
PB - IEEE Computer Society
T2 - 18th International Conference on Nanotechnology, NANO 2018
Y2 - 23 July 2018 through 26 July 2018
ER -