TY - GEN
T1 - Connecting atomistic and continuum models for (In,Ga)N quantum wells
T2 - 2021 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2021
AU - Schulz, S.
AU - O'Donovan, M.
AU - Chaudhuri, D.
AU - Patra, S. K.
AU - Farrell, P.
AU - Marquardt, O.
AU - Streckenbach, T.
AU - Koprucki, T.
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/13
Y1 - 2021/9/13
N2 - We present a multi-scale framework for calculating electronic and transport properties of nitride-based devices. Here, an atomistic tight-binding model is connected with continuum-based electronic structure and transport models. In a first step, the electronic structure of (In,Ga)N quantum wells is analyzed and compared between atomistic and continuum-based approaches, showing that even though the two models operate on the same energy landscape, the obtained results differ noticeably; we briefly discuss approaches to improve the agreement between the two methods. Equipped with this information, uni-polar carrier transport is investigated. Our calculations reveal that both random alloy fluctuations and quantum corrections significantly impact the transport, consistent with previous literature results.
AB - We present a multi-scale framework for calculating electronic and transport properties of nitride-based devices. Here, an atomistic tight-binding model is connected with continuum-based electronic structure and transport models. In a first step, the electronic structure of (In,Ga)N quantum wells is analyzed and compared between atomistic and continuum-based approaches, showing that even though the two models operate on the same energy landscape, the obtained results differ noticeably; we briefly discuss approaches to improve the agreement between the two methods. Equipped with this information, uni-polar carrier transport is investigated. Our calculations reveal that both random alloy fluctuations and quantum corrections significantly impact the transport, consistent with previous literature results.
UR - https://www.scopus.com/pages/publications/85116382543
U2 - 10.1109/NUSOD52207.2021.9541461
DO - 10.1109/NUSOD52207.2021.9541461
M3 - Conference proceeding
AN - SCOPUS:85116382543
T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
SP - 135
EP - 136
BT - 2021 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2021
PB - IEEE Computer Society
Y2 - 13 September 2021 through 17 September 2021
ER -