Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C

C. Cobianu; P. Cosmin; M. Modreanu; D. Dascalu; J. Holleman

Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C

C. Cobianu
, P. Cosmin
, M. Modreanu
, D. Dascalu
, J. Holleman

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH₄ at low temperatures in the range of 500-550 °C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.

Original language	English
Pages	235-238
Number of pages	4
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania Duration: 7 Oct 1997 → 11 Oct 1997

Conference

Conference	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
City	Sinaia, Romania
Period	7/10/97 → 11/10/97

Cite this

@conference{0dd65c8a8c6043fcacefb5f1fad5a20d,

title = "Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C",

abstract = "In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH4 at low temperatures in the range of 500-550 °C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.",

author = "C. Cobianu and P. Cosmin and M. Modreanu and D. Dascalu and J. Holleman",

year = "1997",

language = "English",

pages = "235--238",

note = "Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) ; Conference date: 07-10-1997 Through 11-10-1997",

}

Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C. / Cobianu, C.; Cosmin, P.; Modreanu, M. et al.
1997. 235-238 Paper presented at Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2), Sinaia, Romania.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C

AU - Cobianu, C.

AU - Cosmin, P.

AU - Modreanu, M.

AU - Dascalu, D.

AU - Holleman, J.

PY - 1997

Y1 - 1997

N2 - In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH4 at low temperatures in the range of 500-550 °C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.

AB - In this paper we have investigated the low pressure chemical vapor deposition (LPCVD) of undoped silicon films from SiH4 at low temperatures in the range of 500-550 °C and the pressure range of 20-100 Pa by means of a variable distance between wafers, ranging from 6 to 60 mm within the same run of an industrial reactor. A simple plug flow model was fitted to the experimental data in order to determine the kinetic constants of the gas phase and surface reactions responsible for the film deposition.

UR - https://www.scopus.com/pages/publications/0030640807

M3 - Paper

AN - SCOPUS:0030640807

SP - 235

EP - 238

T2 - Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)

Y2 - 7 October 1997 through 11 October 1997

ER -

Contribution of gas phase reactions to the growth rate of LPCVD silicon films in the temperature range from 500 to 550 °C

Abstract

Conference

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