Control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics. Part II

A. C. Jones; T. J. Leedham; P. J. Wright; M. J. Crosbie; D. J. Williams; H. O. Davies; K. A. Fleeting; P. O'Brien; M. E. Pemble

doi:10.1016/S1369-8001(99)00011-6

Control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics. Part II

A. C. Jones
, T. J. Leedham
, P. J. Wright
, M. J. Crosbie
, D. J. Williams
, H. O. Davies
, K. A. Fleeting
, P. O'Brien
, M. E. Pemble

Research output: Contribution to journal › Article › peer-review

Abstract

MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O₃, TiO₂ and SrBi₂Ta₂O₉ which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimized. In this paper we describe our approach to `molecular design' and discuss how the substitution of simple alkoxide groups by β-diketonates or donor-functionalized ligands can result in precursors with improved physical properties and optimum MOCVD characteristics.

Original language	English
Pages (from-to)	165-171
Number of pages	7
Journal	Materials Science in Semiconductor Processing
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/S1369-8001(99)00011-6
Publication status	Published - Jul 1999

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title = "Control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics. Part II",

abstract = "MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O3, TiO2 and SrBi2Ta2O9 which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimized. In this paper we describe our approach to `molecular design' and discuss how the substitution of simple alkoxide groups by β-diketonates or donor-functionalized ligands can result in precursors with improved physical properties and optimum MOCVD characteristics.",

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year = "1999",

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doi = "10.1016/S1369-8001(99)00011-6",

language = "English",

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AU - Jones, A. C.

AU - Leedham, T. J.

AU - Wright, P. J.

AU - Crosbie, M. J.

AU - Williams, D. J.

AU - Davies, H. O.

AU - Fleeting, K. A.

AU - O'Brien, P.

AU - Pemble, M. E.

PY - 1999/7

Y1 - 1999/7

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AB - MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O3, TiO2 and SrBi2Ta2O9 which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimized. In this paper we describe our approach to `molecular design' and discuss how the substitution of simple alkoxide groups by β-diketonates or donor-functionalized ligands can result in precursors with improved physical properties and optimum MOCVD characteristics.

UR - https://www.scopus.com/pages/publications/0032668987

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SP - 165

EP - 171

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 2

ER -

Control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics. Part II

Abstract

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