Controlling interface reactivity and Schottky barrier height in AuZnSe (001) junctions

E. Pelucchi; D. Kumar; M. Lazzarino; S. Rubini; A. Franciosi

doi:10.1116/1.2194944

Controlling interface reactivity and Schottky barrier height in AuZnSe (001) junctions

E. Pelucchi
, D. Kumar
, M. Lazzarino
, S. Rubini
, A. Franciosi

Research output: Contribution to journal › Article › peer-review

Abstract

Transport studies of patterned AuZnSe (001) contacts fabricated by molecular beam epitaxy reveal substantial lateral inhomogeneities in the Schottky barrier height. The x-ray photoemission results provide evidence of chemical reactions at a number of preferential surface sites. Incorporation of ultrathin Zn interlayers between the ZnSe substrate and the Au overlayer decreases the value of the n -type Schottky barrier height from 1.62 to 1.05 eV and eliminates all evidence of lateral inhomogeneities in the barrier height. The interlayer-induced Schottky barrier tunability is found to be primarily limited by Zn-Au alloying within the overlayer.

Original language	English
Pages (from-to)	1259-1265
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	3
DOIs	https://doi.org/10.1116/1.2194944
Publication status	Published - May 2006
Externally published	Yes

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abstract = "Transport studies of patterned AuZnSe (001) contacts fabricated by molecular beam epitaxy reveal substantial lateral inhomogeneities in the Schottky barrier height. The x-ray photoemission results provide evidence of chemical reactions at a number of preferential surface sites. Incorporation of ultrathin Zn interlayers between the ZnSe substrate and the Au overlayer decreases the value of the n -type Schottky barrier height from 1.62 to 1.05 eV and eliminates all evidence of lateral inhomogeneities in the barrier height. The interlayer-induced Schottky barrier tunability is found to be primarily limited by Zn-Au alloying within the overlayer.",

author = "E. Pelucchi and D. Kumar and M. Lazzarino and S. Rubini and A. Franciosi",

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AU - Pelucchi, E.

AU - Kumar, D.

AU - Lazzarino, M.

AU - Rubini, S.

AU - Franciosi, A.

PY - 2006/5

Y1 - 2006/5

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AB - Transport studies of patterned AuZnSe (001) contacts fabricated by molecular beam epitaxy reveal substantial lateral inhomogeneities in the Schottky barrier height. The x-ray photoemission results provide evidence of chemical reactions at a number of preferential surface sites. Incorporation of ultrathin Zn interlayers between the ZnSe substrate and the Au overlayer decreases the value of the n -type Schottky barrier height from 1.62 to 1.05 eV and eliminates all evidence of lateral inhomogeneities in the barrier height. The interlayer-induced Schottky barrier tunability is found to be primarily limited by Zn-Au alloying within the overlayer.

UR - https://www.scopus.com/pages/publications/33744789201

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Controlling interface reactivity and Schottky barrier height in AuZnSe (001) junctions

Abstract

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