Abstract
The control of the native stacking fault density in II-VI/III-V heterostructures was discussed. Several interface fabrication procedures were used. It was found that only two of the procedures lead to stacking fault densities below 104 cm-2.
| Original language | English |
|---|---|
| Pages (from-to) | 81-83 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 7 Jul 2003 |
| Externally published | Yes |