Correlation between optical properties and interface morphology of GaAsAlGaAs quantum wells

N. Moret; D. Y. Oberli; E. Pelucchi; N. Gogneau; A. Rudra; E. Kapon

doi:10.1063/1.2193039

Correlation between optical properties and interface morphology of GaAsAlGaAs quantum wells

N. Moret
, D. Y. Oberli
, E. Pelucchi
, N. Gogneau
, A. Rudra
, E. Kapon

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

Abstract

We investigate the embedded interfaces of GaAsAlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°) -misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.

Original language	English
Article number	141917
Journal	Applied Physics Letters
Volume	88
Issue number	14
DOIs	https://doi.org/10.1063/1.2193039
Publication status	Published - 3 Apr 2006
Externally published	Yes

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abstract = "We investigate the embedded interfaces of GaAsAlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°) -misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.",

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AU - Moret, N.

AU - Oberli, D. Y.

AU - Pelucchi, E.

AU - Gogneau, N.

AU - Rudra, A.

AU - Kapon, E.

PY - 2006/4/3

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N2 - We investigate the embedded interfaces of GaAsAlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°) -misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.

AB - We investigate the embedded interfaces of GaAsAlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (<1°) -misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorientation, we observe different growth modes at the embedded interfaces, which are directly correlated to the photoluminescence linewidth. We show that the narrowest linewidth is obtained on 0.2°-off (001) substrates for which the heterointerfaces consist of atomically smooth narrow terraces.

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U2 - 10.1063/1.2193039

DO - 10.1063/1.2193039

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Correlation between optical properties and interface morphology of GaAsAlGaAs quantum wells

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