Abstract
We investigate the emission dynamics of InAs/GaAs quantum dots (QDs) coupled to an InGaAs quantum well in a tunnel injection scheme by means of time-resolved photoluminescence. Under high-power excitation we observe a redshift in the QD emission of the order of 20 meV. The optical transition intensity shows a complex evolution, where an initial plateau phase is followed by an increase in intensity before a single-exponential decay. We attribute this behavior to the Coulomb interactions between the carriers in a charged QD and corroborate the experimental results with both a rate equation model and self-consistent eight-band kp calculations.
| Original language | English |
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| Article number | 091105 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 30 Aug 2010 |