Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing

F. Bertoluzza; P. Cova; N. Delmonte; P. Pampili; M. Portesine

doi:10.1016/j.microrel.2010.07.123

Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing

F. Bertoluzza
, P. Cova
, N. Delmonte
, P. Pampili
, M. Portesine

Research output: Contribution to journal › Article › peer-review

Abstract

Reliability requirements for very high power devices are growing for their importance in industrial drives and renewable energy; testing those devices in operating condition is more and more difficult. A coupled measurement-simulation based design procedure is presented and applied to high power PiN diodes for application with fast IGBTs or IGCTs, in which high di/dt's can result in too high current or voltage or energy peaks during turn-off, limiting the reliability of the circuit. Appropriately tuned simulation of the semiconductor device embedded in the test circuit allows to overcome measurement capability limits and to properly design the diode itself and a specific test circuit.

Original language	English
Pages (from-to)	1720-1724
Number of pages	5
Journal	Microelectronics Reliability
Volume	50
Issue number	9-11
DOIs	https://doi.org/10.1016/j.microrel.2010.07.123
Publication status	Published - 1 Sep 2010
Externally published	Yes

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10.1016/j.microrel.2010.07.123

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@article{ca562ebcca214d15a7662f6f9153e449,

title = "Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing",

abstract = "Reliability requirements for very high power devices are growing for their importance in industrial drives and renewable energy; testing those devices in operating condition is more and more difficult. A coupled measurement-simulation based design procedure is presented and applied to high power PiN diodes for application with fast IGBTs or IGCTs, in which high di/dt's can result in too high current or voltage or energy peaks during turn-off, limiting the reliability of the circuit. Appropriately tuned simulation of the semiconductor device embedded in the test circuit allows to overcome measurement capability limits and to properly design the diode itself and a specific test circuit.",

author = "F. Bertoluzza and P. Cova and N. Delmonte and P. Pampili and M. Portesine",

year = "2010",

month = sep,

day = "1",

doi = "10.1016/j.microrel.2010.07.123",

language = "English",

volume = "50",

pages = "1720--1724",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "9-11",

}

TY - JOUR

T1 - Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing

AU - Bertoluzza, F.

AU - Cova, P.

AU - Delmonte, N.

AU - Pampili, P.

AU - Portesine, M.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Reliability requirements for very high power devices are growing for their importance in industrial drives and renewable energy; testing those devices in operating condition is more and more difficult. A coupled measurement-simulation based design procedure is presented and applied to high power PiN diodes for application with fast IGBTs or IGCTs, in which high di/dt's can result in too high current or voltage or energy peaks during turn-off, limiting the reliability of the circuit. Appropriately tuned simulation of the semiconductor device embedded in the test circuit allows to overcome measurement capability limits and to properly design the diode itself and a specific test circuit.

AB - Reliability requirements for very high power devices are growing for their importance in industrial drives and renewable energy; testing those devices in operating condition is more and more difficult. A coupled measurement-simulation based design procedure is presented and applied to high power PiN diodes for application with fast IGBTs or IGCTs, in which high di/dt's can result in too high current or voltage or energy peaks during turn-off, limiting the reliability of the circuit. Appropriately tuned simulation of the semiconductor device embedded in the test circuit allows to overcome measurement capability limits and to properly design the diode itself and a specific test circuit.

UR - https://www.scopus.com/pages/publications/84755161124

U2 - 10.1016/j.microrel.2010.07.123

DO - 10.1016/j.microrel.2010.07.123

M3 - Article

AN - SCOPUS:84755161124

SN - 0026-2714

VL - 50

SP - 1720

EP - 1724

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

ER -

Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing

Abstract

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