Crack initiation and termination in III-V epitaxial layers

R. T. Murray; G. Hill; M. Hopkinson; P. J. Parbrook

doi:10.1080/14786430310001606154

Crack initiation and termination in III-V epitaxial layers

R. T. Murray
, G. Hill
, M. Hopkinson
, P. J. Parbrook

University of Liverpool
University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.

Original language	English
Pages (from-to)	3077-3092
Number of pages	16
Journal	Philosophical Magazine
Volume	83
Issue number	27
DOIs	https://doi.org/10.1080/14786430310001606154
Publication status	Published - 21 Sept 2003
Externally published	Yes

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10.1080/14786430310001606154

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title = "Crack initiation and termination in III-V epitaxial layers",

abstract = "Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.",

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AU - Murray, R. T.

AU - Hill, G.

AU - Hopkinson, M.

AU - Parbrook, P. J.

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Y1 - 2003/9/21

N2 - Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.

AB - Cracks in III-V epitaxial layers of cubic and hexagonal semiconductors have been studied to elucidate mechanisms of nucleation and termination. Pre-existing intersecting cracks and oval defects are very effective terminators. Cracks can be initiated at scribe marks and deep pits with clearly defined facets. However, for the majority of cracks propagated during the growth phase an additional nucleation feature which permits a crack to grow outwards in opposite directions is required but has not yet been observed.

UR - https://www.scopus.com/pages/publications/0242285532

U2 - 10.1080/14786430310001606154

DO - 10.1080/14786430310001606154

M3 - Article

AN - SCOPUS:0242285532

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VL - 83

SP - 3077

EP - 3092

JO - Philosophical Magazine

JF - Philosophical Magazine

IS - 27

ER -

Crack initiation and termination in III-V epitaxial layers

Abstract

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