Crack nuclei in AlGaN epitaxial layers

R. T. Murray; P. J. Parbook; G. Hill

Crack nuclei in AlGaN epitaxial layers

R. T. Murray
, P. J. Parbook
, G. Hill

Research output: Contribution to journal › Article › peer-review

Abstract

Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all 〈 112̄0 〉 directions. Thus mid crack, end crack, and "V" and "Y" junctions have been found co-located with pits.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Design and Nature
Volume	6
Publication status	Published - 2004
Externally published	Yes
Event	Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004

Cite this

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title = "Crack nuclei in AlGaN epitaxial layers",

abstract = "Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all 〈 11{\=2}0 〉 directions. Thus mid crack, end crack, and {"}V{"} and {"}Y{"} junctions have been found co-located with pits.",

author = "Murray, \{R. T.\} and Parbook, \{P. J.\} and G. Hill",

year = "2004",

language = "English",

volume = "6",

pages = "351--354",

journal = "Design and Nature",

issn = "1478-0585",

publisher = "WITPress",

note = "Design and Nature II: Comparing Design in Nature with Science and Engineering ; Conference date: 28-06-2004 Through 30-06-2004",

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T1 - Crack nuclei in AlGaN epitaxial layers

AU - Murray, R. T.

AU - Parbook, P. J.

AU - Hill, G.

PY - 2004

Y1 - 2004

N2 - Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all 〈 112̄0 〉 directions. Thus mid crack, end crack, and "V" and "Y" junctions have been found co-located with pits.

AB - Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all 〈 112̄0 〉 directions. Thus mid crack, end crack, and "V" and "Y" junctions have been found co-located with pits.

UR - https://www.scopus.com/pages/publications/7744230490

M3 - Article

AN - SCOPUS:7744230490

SN - 1478-0585

VL - 6

SP - 351

EP - 354

JO - Design and Nature

JF - Design and Nature

T2 - Design and Nature II: Comparing Design in Nature with Science and Engineering

Y2 - 28 June 2004 through 30 June 2004

ER -

Crack nuclei in AlGaN epitaxial layers

Abstract

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