Crack nuclei in AlGaN epitaxial layers

R. T. Murray; P. J. Parbook; G. Hill

doi:10.1201/9781351074636

Crack nuclei in AlGaN epitaxial layers

R. T. Murray
, P. J. Parbook
, G. Hill

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all <1120> directions. Thus mid crack, end crack, and “V” and “Y” junctions have been found co-located with pits.

Original language	English
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	351-354
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
Publication status	Published - 1 Jan 2018
Externally published	Yes

Access to Document

10.1201/9781351074636

Cite this

@inbook{3219c2c08381475abffd9a5c420bf927,

title = "Crack nuclei in AlGaN epitaxial layers",

abstract = "Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all <1120> directions. Thus mid crack, end crack, and “V” and “Y” junctions have been found co-located with pits.",

author = "Murray, \{R. T.\} and Parbook, \{P. J.\} and G. Hill",

note = "Publisher Copyright: {\textcopyright} 2003 IOP Publishing Ltd.",

year = "2018",

month = jan,

day = "1",

doi = "10.1201/9781351074636",

language = "English",

isbn = "0750309792",

pages = "351--354",

booktitle = "Microscopy of Semiconducting Materials 2003",

publisher = "CRC Press",

address = "Netherlands",

}

TY - CHAP

T1 - Crack nuclei in AlGaN epitaxial layers

AU - Murray, R. T.

AU - Parbook, P. J.

AU - Hill, G.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all <1120> directions. Thus mid crack, end crack, and “V” and “Y” junctions have been found co-located with pits.

AB - Cracks are often found in epitaxial layers of AlGaN, grown on GaN buffer layers, which are under tensile stress due to lattice misfit. The required stress concentrators to initiate cracking are shown to be nanopipes or screw dislocations capped by pits. Cracks may propagate outwards from the species of the hexagonal pits in all <1120> directions. Thus mid crack, end crack, and “V” and “Y” junctions have been found co-located with pits.

UR - https://www.scopus.com/pages/publications/85053298123

U2 - 10.1201/9781351074636

DO - 10.1201/9781351074636

M3 - Chapter

AN - SCOPUS:85053298123

SN - 0750309792

SN - 9781315895536

SP - 351

EP - 354

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Crack nuclei in AlGaN epitaxial layers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this