@inproceedings{9263d9260ecd42bcaebc9241656c3d72,
title = "Crystal damage removal by spike And flash annealing",
abstract = "The formation of extended defects resulting from the precipitation of the large amounts of interstitials and vacancies generated during the dopant and pre-amorphisation implantation is the major issue related to the formation of highly doped p+/n junctions. Interactions between defects and implanted dopants produce diffusion and activation anomalies that are among the major obstacles to the realisation of ultra-shallow junctions satisfying the ITRS requirements. The ideal thermal treatment should remove all the damage and get a high dopant activation with minimal diffusion. Modifying first the depth of the end-of-range damage by varying the pre-amorphisation implantation energy and the thermal budget by using second (spike) and millisecond (fRTP) annealing, the optimal values for implantation energy and thermal budget can be extracted for a complete defect annihilation. Transmission electron microscopy is used to determine the crystal quality. copyright The Electrochemical Society.",
author = "W. Lerch and S. Paul and J. Niess and S. McCoy and J. Gelpey and F. Cristiano and S. Boninelli and O. Marcelot and Fazzini, \{P. F.\} and R. Duffy",
year = "2006",
doi = "10.1149/1.2356266",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "77--84",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",
address = "United States",
edition = "2",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}