@inproceedings{61d5801a4565430b950c8995220e2c14,
title = "CVD-grown back-gated MoS2transistors",
abstract = "In this work, the electrical performance and reliability of scalable CVD-grown MoS2 transistors have been evaluated. Transfer and output characteristics, hysteresis and low-frequency noise signature have been characterized revealing the influence of surface and oxide interfaces and the disturbance due to number of carrier fluctuations on the back-gated transistor response.",
author = "Carlos Marquez and Norberto Salazar and Farzan Gity and Carlos Navarro and Gioele Mirabelli and Ray Duffy and Jose Galdon and Santiago Navarro and Hurley, \{Paul K.\} and Francisco Gamiz",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 ; Conference date: 01-09-2020 Through 30-09-2020",
year = "2020",
month = sep,
day = "1",
doi = "10.1109/EUROSOI-ULIS49407.2020.9365295",
language = "English",
series = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
address = "United States",
}