Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff

J. Justice; B. Corbett; S. Walsh; L. Considine; W. M. Kelly

doi:10.1049/el:19950915

Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff

J. Justice
, B. Corbett
, S. Walsh
, L. Considine
, W. M. Kelly

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors arc fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on posttransferred material. A 4 × 10 array of functioning devices is described.

Original language	English
Pages (from-to)	1382-1383
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	16
DOIs	https://doi.org/10.1049/el:19950915
Publication status	Published - 3 Aug 1995

Keywords

Epitaxial lift-off
pin photodiodes

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10.1049/el:19950915

Cite this

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title = "Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff",

abstract = "A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors arc fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on posttransferred material. A 4 × 10 array of functioning devices is described.",

keywords = "Epitaxial lift-off, pin photodiodes",

author = "J. Justice and B. Corbett and S. Walsh and L. Considine and Kelly, \{W. M.\}",

year = "1995",

month = aug,

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doi = "10.1049/el:19950915",

language = "English",

volume = "31",

pages = "1382--1383",

journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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T1 - Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff

AU - Justice, J.

AU - Corbett, B.

AU - Walsh, S.

AU - Considine, L.

AU - Kelly, W. M.

PY - 1995/8/3

Y1 - 1995/8/3

N2 - A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors arc fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on posttransferred material. A 4 × 10 array of functioning devices is described.

AB - A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors arc fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on posttransferred material. A 4 × 10 array of functioning devices is described.

KW - Epitaxial lift-off

KW - pin photodiodes

UR - https://www.scopus.com/pages/publications/0029634674

U2 - 10.1049/el:19950915

DO - 10.1049/el:19950915

M3 - Article

AN - SCOPUS:0029634674

SN - 0013-5194

VL - 31

SP - 1382

EP - 1383

JO - Electronics Letters

JF - Electronics Letters

IS - 16

ER -

Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff

Abstract

Keywords

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