Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

O. Syshchyk; B. Hsu; H. Yu; V. Motsnyi; A. Vais; B. Kunert; Y. Mols; R. Alcotte; R. Puybaret; N. Waldron; P. Soussan; P. Boulenc; G. Karve; E. Simoen; N. Collaert; B. Puers; C. Van Hoof

doi:10.1103/PhysRevApplied.14.024093

Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

O. Syshchyk
, B. Hsu
, H. Yu
, V. Motsnyi
, A. Vais
, B. Kunert
, Y. Mols
, R. Alcotte
, R. Puybaret
, N. Waldron
, P. Soussan
, P. Boulenc
, G. Karve
, E. Simoen
, N. Collaert
, B. Puers
, C. Van Hoof

Research output: Contribution to journal › Article › peer-review

Abstract

Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with NT≃3×1014cm-3, is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (NSS) directly from the DLTS spectrum. GaAs nanoridge diodes show NSS≃2×1013cm-2 compared to planar diode approximately 6.5×1012cm-2. A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.

Original language	English
Article number	024093
Journal	Physical Review Applied
Volume	14
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevApplied.14.024093
Publication status	Published - Aug 2020
Externally published	Yes

Access to Document

10.1103/PhysRevApplied.14.024093

Cite this

Syshchyk, O., Hsu, B., Yu, H., Motsnyi, V., Vais, A., Kunert, B., Mols, Y., Alcotte, R., Puybaret, R., Waldron, N., Soussan, P., Boulenc, P., Karve, G., Simoen, E., Collaert, N., Puers, B., & Van Hoof, C. (2020). Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates. Physical Review Applied, 14(2), Article 024093. https://doi.org/10.1103/PhysRevApplied.14.024093

@article{6b71644527ec4359a6cecfaf9d10f60e,

title = "Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates",

abstract = "Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with NT≃3×1014cm-3, is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (NSS) directly from the DLTS spectrum. GaAs nanoridge diodes show NSS≃2×1013cm-2 compared to planar diode approximately 6.5×1012cm-2. A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.",

author = "O. Syshchyk and B. Hsu and H. Yu and V. Motsnyi and A. Vais and B. Kunert and Y. Mols and R. Alcotte and R. Puybaret and N. Waldron and P. Soussan and P. Boulenc and G. Karve and E. Simoen and N. Collaert and B. Puers and \{Van Hoof\}, C.",

note = "Publisher Copyright: {\textcopyright} 2020 American Physical Society.",

year = "2020",

month = aug,

doi = "10.1103/PhysRevApplied.14.024093",

language = "English",

volume = "14",

journal = "Physical Review Applied",

issn = "2331-7019",

publisher = "American Physical Society",

number = "2",

}

Syshchyk, O, Hsu, B, Yu, H, Motsnyi, V, Vais, A, Kunert, B, Mols, Y, Alcotte, R, Puybaret, R, Waldron, N, Soussan, P, Boulenc, P, Karve, G, Simoen, E, Collaert, N, Puers, B & Van Hoof, C 2020, 'Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates', Physical Review Applied, vol. 14, no. 2, 024093. https://doi.org/10.1103/PhysRevApplied.14.024093

TY - JOUR

T1 - Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

AU - Syshchyk, O.

AU - Hsu, B.

AU - Yu, H.

AU - Motsnyi, V.

AU - Vais, A.

AU - Kunert, B.

AU - Mols, Y.

AU - Alcotte, R.

AU - Puybaret, R.

AU - Waldron, N.

AU - Soussan, P.

AU - Boulenc, P.

AU - Karve, G.

AU - Simoen, E.

AU - Collaert, N.

AU - Puers, B.

AU - Van Hoof, C.

PY - 2020/8

Y1 - 2020/8

N2 - Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with NT≃3×1014cm-3, is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (NSS) directly from the DLTS spectrum. GaAs nanoridge diodes show NSS≃2×1013cm-2 compared to planar diode approximately 6.5×1012cm-2. A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.

AB - Monolithically integrated GaAs p-i-n diodes are demonstrated on 300-mm Si (001) substrates using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used to perform defect analysis for nanoridge and planar GaAs diodes. The point defect, EL2 with NT≃3×1014cm-3, is observed for nanoridge p-i-n diodes. A methodology is developed to extract the surface-state density (NSS) directly from the DLTS spectrum. GaAs nanoridge diodes show NSS≃2×1013cm-2 compared to planar diode approximately 6.5×1012cm-2. A clear correlation is observed between dark current and defect density. An investigation on the impact of an in situ and ex situ passivation layers on the leakage current reduction is performed for GaAs p-i-n diodes.

UR - https://www.scopus.com/pages/publications/85091863755

U2 - 10.1103/PhysRevApplied.14.024093

DO - 10.1103/PhysRevApplied.14.024093

M3 - Article

AN - SCOPUS:85091863755

SN - 2331-7019

VL - 14

JO - Physical Review Applied

JF - Physical Review Applied

IS - 2

M1 - 024093

ER -

Deep-Level Transient Spectroscopy of GaAs Nanoridge Diodes Grown on Si Substrates

Abstract

Access to Document

Other files and links

Fingerprint

Cite this