@inproceedings{17d67d2376904f53be415d70df579c73,
title = "Deep traps in In0.3Ga0.7As nFinFETs studied by Generation-Recombination noise",
abstract = "The assessment of deep traps in In0.3Ga0.7As nFinFETs by Generation-Recombination (GR) noise spectroscopy is described in this paper. The gate voltage dependence of the corner frequency is studied for several devices with different gate lengths. Both gate-voltage-independent and gate-voltage-dependent corner frequencies are found. It is shown that the noise type turns from GR to Random Telegraph Signal (RTS) when the device size scales. For GR noise, the activation energy of the traps is extracted, which can tentatively be attributed to O-related traps and dislocations, with an effective density of these deep levels varying from 1011/cm2 to 1012/cm2. For RTS, the capture and emission time constant are extracted. It could be ascribed to a single trap in the gate oxide rather than in the film, and it is concluded that the trap level is lower than the Fermi level when no bias is applied.",
keywords = "deep level traps, GR noise, InGaAs FinFETs, RTS",
author = "L. He and H. Chen and Guo, \{D. D.\} and Hu, \{L. N.\} and Y. Qin and E. Simoen and C. Claeys and B. Kunert and N. Waldron and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 International Conference on Noise and Fluctuations, ICNF 2017 ; Conference date: 20-06-2017 Through 23-06-2017",
year = "2017",
month = jul,
day = "19",
doi = "10.1109/ICNF.2017.7985987",
language = "English",
series = "2017 International Conference on Noise and Fluctuations, ICNF 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 International Conference on Noise and Fluctuations, ICNF 2017",
address = "United States",
}