Defect analysis and alignment quantification of line arrays prepared by directed self-assembly of a block copolymer

Different linear patterns obtained from the directed self-assembly of the block copolymer (BCP) polystyrene-b-polyethylene oxide (PS-b-PEO) were analysed and compared. The hexagonal phase PS-b-PEO in a thin film exhibits linear pattern morphology, by conventional solvent annealing in an atmosphere saturated in chloroform. The surface energy of the silicon substrates was varied using surface functionalization of a self-assembly monolayer (SAM) and a polymer brush, chosen to investigate the influence of the surface energy on the self-assembly of the BCP. The linear patterns formed were analyzed with innovative image analysis software specifically developed in our laboratory to identify elements and defects of line arrays from block copolymer self-assembly. The technique starts by performing dimensional metrology to calculate the pitch size and estimate the linewidth of the lines. Secondly, the methodology allows identification and quantification of typical defects observable in BCP systems, such as turning points, disclination or branching points, break or lone points and end points. The defect density and the quantification of the alignment were estimated using our technique. The methodology presented here represents a step forward in dimensional metrology and defect analysis of BCP DSA systems and can be readily used to analyze other lithographic or non-lithographic patterns.