TY - GEN
T1 - Defect evolution and C+/F+ Co-implantation in millisecond flash annealed ultra-shallow junctions
AU - Cristiano, F.
AU - Bazizi, E. M.
AU - Fazzini, P. F.
AU - Paul, S.
AU - Lerch, W.
AU - Boninelli, S.
AU - Duffy, R.
AU - Pakfar, A.
AU - Bourdon, H.
AU - Milesi, F.
PY - 2008
Y1 - 2008
N2 - In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.
AB - In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.
UR - https://www.scopus.com/pages/publications/50849113463
U2 - 10.1109/IWJT.2008.4540030
DO - 10.1109/IWJT.2008.4540030
M3 - Conference proceeding
AN - SCOPUS:50849113463
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 114
EP - 119
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -