Defect evolution and C+/F+ Co-implantation in millisecond flash annealed ultra-shallow junctions

F. Cristiano; E. M. Bazizi; P. F. Fazzini; S. Paul; W. Lerch; S. Boninelli; R. Duffy; A. Pakfar; H. Bourdon; F. Milesi

doi:10.1109/IWJT.2008.4540030

Defect evolution and C⁺/F⁺ Co-implantation in millisecond flash annealed ultra-shallow junctions

F. Cristiano
, E. M. Bazizi
, P. F. Fazzini
, S. Paul
, W. Lerch
, S. Boninelli
, R. Duffy
, A. Pakfar
, H. Bourdon
, F. Milesi

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.

Original language	English
Title of host publication	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages	114-119
Number of pages	6
DOIs	https://doi.org/10.1109/IWJT.2008.4540030
Publication status	Published - 2008
Externally published	Yes
Event	IWJT-2008 - International Workshop on Junction Technology - Shanghai, China Duration: 15 May 2008 → 16 May 2008

Publication series

Name	IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Conference

Conference	IWJT-2008 - International Workshop on Junction Technology
Country/Territory	China
City	Shanghai
Period	15/05/08 → 16/05/08

Access to Document

10.1109/IWJT.2008.4540030

Cite this

Cristiano, F., Bazizi, E. M., Fazzini, P. F., Paul, S., Lerch, W., Boninelli, S., Duffy, R., Pakfar, A., Bourdon, H., & Milesi, F. (2008). Defect evolution and C⁺/F⁺ Co-implantation in millisecond flash annealed ultra-shallow junctions. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 114-119). Article 4540030 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540030

@inbook{60fd7b0e016245868f13dc350442c35d,

title = "Defect evolution and C+/F+ Co-implantation in millisecond flash annealed ultra-shallow junctions",

abstract = "In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.",

author = "F. Cristiano and Bazizi, \{E. M.\} and Fazzini, \{P. F.\} and S. Paul and W. Lerch and S. Boninelli and R. Duffy and A. Pakfar and H. Bourdon and F. Milesi",

year = "2008",

doi = "10.1109/IWJT.2008.4540030",

language = "English",

isbn = "9781424417384",

series = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

pages = "114--119",

booktitle = "IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology",

note = "IWJT-2008 - International Workshop on Junction Technology ; Conference date: 15-05-2008 Through 16-05-2008",

}

Cristiano, F, Bazizi, EM, Fazzini, PF, Paul, S, Lerch, W, Boninelli, S, Duffy, R, Pakfar, A, Bourdon, H & Milesi, F 2008, Defect evolution and C⁺/F⁺ Co-implantation in millisecond flash annealed ultra-shallow junctions. in IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology., 4540030, IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology, pp. 114-119, IWJT-2008 - International Workshop on Junction Technology, Shanghai, China, 15/05/08. https://doi.org/10.1109/IWJT.2008.4540030

Defect evolution and C⁺/F⁺ Co-implantation in millisecond flash annealed ultra-shallow junctions. / Cristiano, F.; Bazizi, E. M.; Fazzini, P. F. et al.
IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 114-119 4540030 (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Defect evolution and C+/F+ Co-implantation in millisecond flash annealed ultra-shallow junctions

AU - Cristiano, F.

AU - Bazizi, E. M.

AU - Fazzini, P. F.

AU - Paul, S.

AU - Lerch, W.

AU - Boninelli, S.

AU - Duffy, R.

AU - Pakfar, A.

AU - Bourdon, H.

AU - Milesi, F.

PY - 2008

Y1 - 2008

N2 - In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.

AB - In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.

UR - https://www.scopus.com/pages/publications/50849113463

U2 - 10.1109/IWJT.2008.4540030

DO - 10.1109/IWJT.2008.4540030

M3 - Chapter

AN - SCOPUS:50849113463

SN - 9781424417384

T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

SP - 114

EP - 119

BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

T2 - IWJT-2008 - International Workshop on Junction Technology

Y2 - 15 May 2008 through 16 May 2008

ER -

Cristiano F, Bazizi EM, Fazzini PF, Paul S, Lerch W, Boninelli S et al. Defect evolution and C⁺/F⁺ Co-implantation in millisecond flash annealed ultra-shallow junctions. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology. 2008. p. 114-119. 4540030. (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). doi: 10.1109/IWJT.2008.4540030