Defect passivation and dark count in Geiger-mode avalanche photodiodes

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Abstract

An experimental study of post metal anneal conditions on dark count in Geiger-mode avalanche photodiodes (GM-APD) has been performed. The GM-APD structure will be shown to be extremely sensitive to post-metal anneals. Dark counts from measured samples decreased by a factor of two for each separate anneal in forming gas using temperatures from 425°C to 450 °C. Conversely anneals of 250 °C in ambient increased dark count for temperature cycles up to 124 hours. Passivation and de-passivation of defect sites within the shallow junction active area are suspected as mechanisms contributing to the variations in dark count.

Original languageEnglish
Title of host publication2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages586-587
Number of pages2
ISBN (Electronic)0780376498
DOIs
Publication statusPublished - 2003
Event2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States
Duration: 30 Mar 20034 Apr 2003

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2003-January
ISSN (Print)1541-7026

Conference

Conference2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/TerritoryUnited States
CityDallas
Period30/03/034/04/03

Keywords

  • APD
  • Dark count
  • Geiger mode avalanche photodiodes
  • Passivation
  • Reliability
  • Single photon counting

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